For Disc Type Wet Extrusion Process 濕式擠出成型用
Type

Temperature Compensation Type

   (溫度補償型)

High-K Type

   (高介電常數型)

Semiconductive Type

   (第三類高介電常數型)
Characterisitics

Temperature Compensation Type
Designation Electric Properties Reference Code Reference Firing Temperature, ℃ Addition of Low Melt Additive
K-value at 1MHz Q Factor Min.

 I.R.

Min. MΩ

 JIS EIA
NPO-10 10.0±1.0 2000 105 CH COH 1320±10 -
NPO-20 23.0±1.0 3000 105 CG COG 1330±10 -
NPO-40 44.0±1.5 3000 105 CG COG 1210±10 -
NPO-110 107±3 3000 105 CG COG 1270±10 O
N750 106±3 1000 105 UH U2H 1230±10 -
SL-330 325±15 2000 105 SL - 1355±10 O
High-K Type
Designation Electric Properties Reference Code Reference Firing Temperature, ℃ Addition of Low Melt Additive
K-value at 25℃ D.F.Max.%

I.R.

 Min. MΩ

 

 JIS EIA
Z5U 11500±1500 1.0 104 ZE Z5U 1360±10 -
Z5V 20000±3000 1.0 104 ZF Z5V 1380±10 -
Y5U 8500±850 1.0 104 YE Y5U 1330±10 -
Y5E 1650±100 1.0 104 YA Y5E 1255±10 O
Y5P 3650±200 1.5 104 YB Y5P 1390±10 O
Y5V 15500±2000 1.0 104 YF Y5V 1380±10 -

Semiconductive Type
Designation Electric Properties  Reference Code Reference Firing Temperature, ℃ Addition of Low Melt Additive
K-value at 25℃ D.F.Max.%

 I.R.

 Min. MΩ

 JIS EIA
SBL— Y5V 12000±1000 0.45 104 YF Y5U 1300±10 -
SBL— Y5U 8500±500 0.5 104 YE Y5V 1325±10 -

  



　

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